mixers - sub harmonic - chip 1 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz parameter min. typ. max. min. typ. max. min. typ. max. units rf frequency range 37 - 40 40 - 43 43 - 46.5 ghz lo frequency range 8.5 - 11 ghz if frequency range dc - 7. 5 ghz conversion loss 14 16 11 13 9 11 db 4lo to rf isolation 22 15 15 db 4lo to if isolation 16 18 25 db input third order intercept (ip3) 30 26 21 db input power for 1 db compression [2] 20 18 16 dbm idd 140 160 210 140 160 210 140 160 210 ma functional diagram features typical applications general description the HMC1093 is ideal for: ? 38 ghz microwave radio ? 42 ghz microwave radio ? military end-use electrical specifcations, t a = +25 c, vdd = +3v, usb [1] sub-harmonically pumped (x4) lo low lo power: -1 dbm high 4lo/rf isolation: 20 db wide if bandwidth: dc to 7.5 ghz downconversion applications die size: 1.45 x 3.85 x 0.1 mm the HMC1093 chip is a sub-harmonically pumped (x4) mmic mixer with an integrated lo amplifer. the HMC1093 chip is ideal for use as a downconverter with 37 to 46.5 ghz at the rf port and dc to 7.5 ghz at the if port. the HMC1093 utilizes a gaas phemt technology and delivers excellent 4lo to rf isolation of 20 db, which eliminates the need for additional fltering. the lo amplifer is a single bias (+3v) two- stage design requiring only -1 dbm of lo power. the rf and lo ports are dc blocked and matched to 50 ohms for ease of use. all data shown herein is measured with the chip in a 50 ohm test fxture connected via 0.025mm (1 mil) wire bonds of minimal length <0.31 mm (<12 mils). [1] unless otherwise noted , all measurements performed as a downconverter with lo = -1 dbm . [2] data taken at if = 7.5 ghz, usb. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 2 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm conversion gain (db) rf frequency (ghz) conversion loss vs. temperature conversion loss vs. lo drive rf return loss lo return loss vs. temperature if return loss 4lo isolation -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -20 -15 -10 -5 0 5 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 7 8 9 10 11 12 13 +25 c +85 c -55 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678910 25 c 85 c -55 c return loss (db) if frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 8 9 10 11 12 4lo/rf 4lo/if isolation (db) lo frequency (ghz) data taken at if = 1 ghz, usb for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 3 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz input ip3 vs. temperature output ip3 vs. temperature 10 14 18 22 26 30 34 38 42 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) 2 6 10 14 18 22 26 30 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) input ip3 vs. lo power output ip3 vs. lo power 10 14 18 22 26 30 34 38 42 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm ip3 (dbm) rf frequency (ghz) 2 6 10 14 18 22 26 30 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm ip3 (dbm) rf frequency (ghz) data taken at if = 1 ghz, usb for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 4 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz conversion loss vs. temperature conversion loss vs. lo drive input ip3 vs. temperature output ip3 vs. temperature -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm conversion gain (db) rf frequency (ghz) 10 14 18 22 26 30 34 38 42 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) 2 6 10 14 18 22 26 30 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) data taken at if = 2 ghz, usb for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 5 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz conversion loss vs. temperature conversion loss vs. lo drive input ip3 vs. temperature output ip3 vs. temperature -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm conversion gain (db) rf frequency (ghz) 10 14 18 22 26 30 34 38 42 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) -6 -2 2 6 10 14 18 22 26 30 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) data taken at if = 3.5 ghz, usb for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 6 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz conversion loss vs. temperature conversion loss vs. lo drive input ip3 vs. temperature output ip3 vs. temperature -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -30 -26 -22 -18 -14 -10 -6 -2 2 37 38 39 40 41 42 43 44 45 46 47 -5 dbm -1 dbm +3 dbm conversion gain (db) rf frequency (ghz) 2 6 10 14 18 22 26 30 34 38 42 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) -10 -6 -2 2 6 10 14 18 22 26 30 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c ip3 (dbm) rf frequency (ghz) input p1db vs. temperature [1] output p1db vs. temperature [1] -4 -2 0 2 4 6 8 10 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55 c p1db (dbm) rf frequency (ghz) 10 12 14 16 18 20 22 24 37 38 39 40 41 42 43 44 45 46 47 +25 c +85 c -55c p1db (dbm) rf frequency (ghz) data taken at if = 7 ghz, usb [1] data taken at if = 7.5 ghz, usb for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 7 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond pad is 0.0026 [0.066] square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. o verall die size .002 electrostatic sensitive device observe handling precautions absolute maximum ratings bias voltage +3.5v rf input power +18dbm lo input power +5dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 15mw/ c above 85 c) 1.6 thermal resistance (r th ) (channel to die bottom) 66.7 c/w operating temperature -55 c to +85c storage temperature -65 c to 125c esd sensitivity (hbm) class 0, passed 150v die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 8 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz pad descriptions pad number function description pad schematic 1 rf this pad is ac coupled and matched to 50 ohms. 2 if this pad is dc coupled and matched to 50 ohms. 3 lo this pad is ac coupled and matched to 50 ohms. 4, 5, 6 vdd1, vdd2, vdd3 power supply voltage for the lo amplifer. external bypass capacitors 100pf, 0.01uf, and 4.7uf are required. die bottom ground die bottom must be connected to rf/dc ground. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 9 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - sub harmonic - chip 10 HMC1093 v00.0613 ga a s mmic sub harmonic mixer, 37 - 46.5 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd pro - tective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is rec - ommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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